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HIGH-POWER GaAlAs IR EMITTERS
OD-880F
GLASS
DOME
.183  .152
.186 .154
.015
1.00
MIN.
.017
ANODE
(CASE)
.100
.209
.220
.041
FEATURES
? High reliability liquid-phase epitaxially grown GaAlAs
? 880nm peak emission for optimum matching with
ODD-45W photodiode
? Wide range of linear power output
? Hermetically sealed TO-46 package
? Narrow angle for long distance applications
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
.030
.040
.197
.205
CATHODE
.036
45°
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P o
Radiant Intensity, I e
TEST CONDITIONS
I F = 100mA
MIN
15
120
TYP
17
135
MAX
UNITS
mW
mW/sr
Peak Emission Wavelength, λ P
880
nm
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
I F = 50mA
80
8
nm
Deg
Forward Voltage, V F
I F = 100mA
1.55
1.9
Volts
Reverse Breakdown Voltage, V R
Capacitance, C
Rise Time
Fall Time
I R = 10 μ A
V R = 0V
5
30
17
0.5
0.5
Volts
pF
μsec
μsec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation 1
Continuous Forward Current
Peak Forward Current (10 μ s, 400Hz) 2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, R THJA1
Thermal Resistance, R THJA2
190mW
100mA
3A
5V
260°C
-55°C to 100°C
100°C
350°C/W Typical
115°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013
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